TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large capacity power supply. Shipments start today.

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The power MOSFET using the SiC, a new material, achieves high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFET, IGBT products. Therefore, it will contribute to lower power consumption and system downsizing.

Fabricated with Toshiba’s second-generation chip design^[1], which improves the reliability of SiC MOSFET, the new device realizes low input capacitance, a low gate-input charge, and low drain-to-source On-resistance. Compared with “GT40QR21,” Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), it cuts turn-off switching loss by about 80% and switching time (fall time) by about 70%, while delivering low On-voltage characteristics with a drain current of 20A or less^[2].

Gate threshold voltage is set in the high range of 4.2V to 5.8V, which reduces malfunction risk (unintended turn on or off). Incorporation of an SiC Schottky barrier diode (SBD) with low forward voltage also helps to reduce power loss.

The new MOSFET will contribute to higher efficiency by reducing power loss in industrial applications, such large capacity AC-DC converters, photovoltaic inverter, and large capacity bidirectional DC-DC converters, and will also contribute to reduced equipment size.

Notes:
[1] Toshiba’s news release on July 30, 2020: “Toshiba’s New Device Structure Improves SiC MOSFET Reliability”
https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2020/07/mosfet-20200730-1.html
[2] ambient temperature 25°C

The MosFet can be protected by other means. If they are from separate power sources and it is unwise to connect the power supply grounds together then an optoisolator is the ideal solution. The next question is what PWM frequency do you plan. If it is relative low then a simple resistor from the Mosfet gate to the Arduino will protect the Arduino. The MOSFET is a bidirectional device, from the point of view that the terminals called the ‘Source’ and ‘Drain’ can be interchanged. That is, an n channel MOSFET (taken as an example here) conducts when the gate to source voltage is above a thresh. Sink current for driving power MOSFETs. With very low pullup and pulldown resistances, this device reduces the transition time of the power MOSFET through the Miller region, which minimizes the switching loss on the MOSFET. The device is a robust half-bridge gate drive with input pins capable of tolerating up to a –10-V input voltage. Learn how to design a high-power bidirectional AC/DC power supply using silicon carbide MOSFETs High-power bidirectional AC/DC power supplies are widely used as uninterruptible power supplies (UPS), energy storage systems (ESS) and onboard chargers (OBC) with vehicle-to-grid (V2G) capability.

Applications

• Large capacity AC-DC converters
• Photovoltaic inverter
• Large capacity bidirectional DC-DC converters

Features

• 2^nd generation chip design (built-in SiC SBD)
• High voltage, low input capacitance, low total gate charge, low On-resistance, low diode forward voltage, high gate threshold voltage:

V_DSS=1200V, C_iss=1680pF (typ.), Q_g=67nC (typ.), R_DS(ON)=70mΩ (typ.), V_DSF=-1.35V (typ.), V_th=4.2～5.8V

• Easy-to-handle enhancement type

Main Specifications

Follow the link below for more on the new product.
https://toshiba.semicon-storage.com/info/lookup.jsp?pid=TW070J120B

To check availability of the new product at online distributors, visit:
https://toshiba.semicon-storage.com/ap-en/semiconductor/where-to-buy/stockcheck.TW070J120B.html

Follow the link below for more on Toshiba SiC MOSFETs.
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/mosfets/sic-mosfets.html

Follow the link below for more on Toshiba SiC Power Devices.
https://toshiba.semicon-storage.com/ap-en/semiconductor/product/sic-power-devices.html

Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
https://toshiba.semicon-storage.com/ap-en/contact.html

*Company names, product names, and service names may be trademarks of their respective companies.
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation combines the vigor of a new company with the wisdom of experience. Since becoming an independent company in July 2017, the company has taken its place among the leading general devices companies, and offers its customers and business partners outstanding solutions in discrete semiconductors, system LSIs and HDD.

Its 24,000 employees around the world share a determination to maximize the value of its products, and emphasize close collaboration with customers to promote co-creation of value and new markets. The company looks forward to building on annual sales now surpassing 750-billion yen (US$6.8 billion) and to contributing to a better future for people everywhere.
Find out more about Toshiba Electronic Devices & Storage Corporation at https://toshiba.semicon-storage.com/ap-en/top.html

Bidirectional solid state relays are had to find in particular for high power switching. Here we will build one.

Fig. 1 illustrates my bidirectional MOSFET relay-switch. It used a photovoltaic opto-coupler to drive dual N-channel MOSFETs.

Fig. 2 is the schematic to the circuit in Fig. 1. The output voltage and current ratings depend on the two MOSFETs used.

While Fig. 3 illustrates the possible connections for a PVT212 bidirectional SSR the same connections can be done with Fig. 2

Power Mosfet Bidirectional Switch Fast Week 5

Alternative Parts

The Vishey VOM1271T is available from Mouser Electronics for $2.33 each or $1.94 each Qty 10.

An alternative is the Toshiba TLP3906 $2.08 each or $1.69 each Qty 10.

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